Phenomenological model of reactive r.f.-magnetron...

Thin Solid Films 2001 Vol. 389; Iss. 1-2

Phenomenological model of reactive r.f.-magnetron sputtering of Si in Ar/O2 atmosphere for the prediction of SiOx thin film stoichiometry from process parameters

H. Seifarth, J.U. Schmidt, R. Grötzschel, M. Klimenkov
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Volume:
389
Year:
2001
Language:
english
Pages:
8
DOI:
10.1016/s0040-6090(01)00872-0
File:
PDF, 392 KB
english, 2001
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