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In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth
Hyoun-woo Kim, Rafael ReifVolume:
289
Year:
1996
Language:
english
Pages:
7
DOI:
10.1016/s0040-6090(96)08841-4
File:
PDF, 653 KB
english, 1996