Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy
B. Holländer, L. Vescan, S. Mesters, S. WickenhäuserVolume:
292
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(96)09086-4
File:
PDF, 491 KB
english, 1997