Erbium doping of Si via ion-beam-induced epitaxial...

Thin Solid Films 1997 Vol. 294; Iss. 1-2

Erbium doping of Si via ion-beam-induced epitaxial crystallization: another route to room-temperature photoluminescence

C. Clerc, H. Bernas, J. Chaumont, P. Boucaud, F. Julien, J.M. Lourtioz
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Volume:
294
Year:
1997
Pages:
4
DOI:
10.1016/s0040-6090(96)09234-6
File:
PDF, 277 KB
1997
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