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Deposition behavior of hexamethydisiloxane films based on the FTIR analysis of Si–O–Si and Si–CH3 bonds
Min Tae KimVolume:
311
Year:
1997
Language:
english
Pages:
7
DOI:
10.1016/s0040-6090(97)00683-4
File:
PDF, 162 KB
english, 1997