MOCVD growth of Bi2Te3 layers using diethyltellurium as a...

Thin Solid Films 1998 Vol. 315; Iss. 1-2

MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor

A Giani, A Boulouz, F Pascal-Delannoy, A Foucaran, A Boyer
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Volume:
315
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(97)00792-x
File:
PDF, 387 KB
english, 1998
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