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Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon
Fujita, N., Jones, R., Eberlein, T.A.G., Öberg, Sven, Briddon, Patrick R.Volume:
131-133
Year:
2008
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.131-133.265
File:
PDF, 311 KB
english, 2008