Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy
W.-X Ni, K.B Joelsson, C.-X Du, G Pozina, I.A Buyanova, W.M Chena, G.V Hansson, B MonemarVolume:
321
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(98)00477-5
File:
PDF, 171 KB
english, 1998