State creation induced by gate bias stress in...

Thin Solid Films 1999 Vol. 337; Iss. 1-2

State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

B. Tala-Ighil, A. Rahal, K. Mourgues, A. Toutah, L. Pichon, T. Mohammed-Brahim, F. Raoult, O. Bonnaud
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Volume:
337
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0040-6090(98)01192-4
File:
PDF, 211 KB
english, 1999
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