Electronic properties of MOS capacitor exposed to...

Thin Solid Films 1999 Vol. 345; Iss. 1

Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

A. Ikeda, T. Sadou, H. Nagashima, K. Kouno, N. Yoshikawa, K. Tshukamoto, Y. Kuroki
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Volume:
345
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0040-6090(99)00062-0
File:
PDF, 236 KB
english, 1999
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