Selective growth of high-quality 3C-SiC using a SiO2...

Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique

M. Eickhoff, H. Möller, M. Rapp, G. Kroetz
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Volume:
345
Year:
1999
Language:
english
Pages:
3
DOI:
10.1016/s0040-6090(99)00233-3
File:
PDF, 497 KB
english, 1999
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