[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
Huang, C. Y., Lee, S., Chobpattana, V., Stemmer, S., Gossard, A. C., Thibeault, B., Mitchell, W., Rodwell, M.Year:
2014
Language:
english
DOI:
10.1109/IEDM.2014.7047107
File:
PDF, 474 KB
english, 2014