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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Thi Ngo, Huong, Rosales, Daniel, Gil, Bernard, Valvin, Pierre, Damilano, Benjamin, Lekhal, Kaddour, de Mierry, PhilippeVolume:
9363
Year:
2015
Language:
english
DOI:
10.1117/12.2076208
File:
PDF, 945 KB
english, 2015