Analysis of inhomogeneous device parameters using...

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

Tuğluoğlu, N., Koralay, H., Akgül, K. B., Çavdar, Ş.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
90
Language:
english
Journal:
Indian Journal of Physics
DOI:
10.1007/s12648-015-0722-8
Date:
January, 2016
File:
PDF, 790 KB
english, 2016
Conversion to is in progress
Conversion to is failed