![](/img/cover-not-exists.png)
Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures
Tuğluoğlu, N., Koralay, H., Akgül, K. B., Çavdar, Ş.Volume:
90
Language:
english
Journal:
Indian Journal of Physics
DOI:
10.1007/s12648-015-0722-8
Date:
January, 2016
File:
PDF, 790 KB
english, 2016