Formation of Voids in SiO2/Si Substrate by Zn Implantation...

Solid State Phenomena 2011 / 8 Vol. 178-179

Formation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal Annealing

Privezentsev, V. Vladimir, Chernykh, Pavel N., Petrov, Dmitrii V.
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Volume:
178-179
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/ssp.178-179.217
Date:
August, 2011
File:
PDF, 1.09 MB
english, 2011
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