Highly Sensitive Wide Bandwidth Photodetector Based on...

ACS Applied Materials & Interfaces 2015 / 07 Vol. 7; Iss. 28

Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS 2 /Graphene Schottky Junction

Vabbina, PhaniKiran, Choudhary, Nitin, Chowdhury, Al-Amin., Sinha, Raju, Karabiyik, Mustafa, Das, Santanu, Choi, Wonbong, Pala, Nezih
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Volume:
7
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.5b00887
Date:
July, 2015
File:
PDF, 1.18 MB
english, 2015
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