Raman shift and electrical properties of MoS...

Nanotechnology 2015 / 07 Vol. 26; Iss. 29

Raman shift and electrical properties of MoS 2 bilayer on boron nitride substrate

Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho, Aoki, Nobuyuki, Ochiai, Yuichi, Watanabe, Kenji, Taniguchi, Takashi
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Volume:
26
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/26/29/295702
Date:
July, 2015
File:
PDF, 666 KB
english, 2015
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