A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques
Cai, Jiangzheng, Zhang, Sumin, Yuan, Jia, Shang, Xinchao, Chen, Liming, Hei, YongVolume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/6/065007
Date:
June, 2015
File:
PDF, 1.83 MB
english, 2015