A 320 mV, 6 kb subthreshold 10T SRAM employing voltage...

A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques

Cai, Jiangzheng, Zhang, Sumin, Yuan, Jia, Shang, Xinchao, Chen, Liming, Hei, Yong
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Volume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/6/065007
Date:
June, 2015
File:
PDF, 1.83 MB
english, 2015
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