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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Chen, Fang-Ming, Chang, Jih-Yuan, Kuo, Yen-Kuang, Lin, Bing-Cheng, Kuo, Hao-ChungVolume:
9363
Year:
2015
Language:
english
DOI:
10.1117/12.2077946
File:
PDF, 561 KB
english, 2015