Properties of N-Polar GaN Films Grown by MOCVD on C-Face...

Advanced Materials Research 2013 / 9 Vol. 805-806

Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

Li, Zhong Hui, Peng, Da Qing, Zhang, Dong Guo, Li, Liang, Ni, Jin Yu, Dong, Xun, Luo, Wei Ke
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Volume:
805-806
Language:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/AMR.805-806.1035
Date:
September, 2013
File:
PDF, 265 KB
english, 2013
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