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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Arai, Kazuo, Kimura, K., Nakamura, K., Yoshida, SadafumiVolume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.211
File:
PDF, 274 KB
english, 2006