Hall Effect and Admittance Measurements of n-Channel 6H-SiC...

Materials Science Forum 2007 Vol. 556-557

Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs

Lee, Kin Kiong, Laube, Michael, Ohshima, Takeshi, Itoh, Hisayoshi, Pensl, Gerhard
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Volume:
556-557
Year:
2007
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.791
File:
PDF, 3.07 MB
english, 2007
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