Post-Growth Reduction of Basal Plane Dislocations by High...

Materials Science Forum 2014 / 2 Vol. 778-780

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, Nadeemullah A., Stahlbush, Robert E., Nath, Anindya, Tadjer, Marko J., Imhoff, Eugene A., Feygelson, Boris N., Nipoti, Roberta
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.324
Date:
February, 2014
File:
PDF, 1.51 MB
english, 2014
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