Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep...

Materials Science Forum 2014 / 2 Vol. 778-780

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy

Sveinbjörnsson, Einar Ö., Gíslason, Olafur
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.603
Date:
February, 2014
File:
PDF, 296 KB
english, 2014
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