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Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect
Ortiz, Guillermo, Mortet, Vincent, Strenger, Chrisitan, Uhnevionak, Viktoryia, Burenkov, Alexander, Bauer, Anton J., Pichler, Peter, Cristiano, Fuccio, Bedel-Pereira, ElénaVolume:
806
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.806.127
Date:
October, 2014
File:
PDF, 448 KB
english, 2014