Retention behavior of ferroelectric memory devices...

Integrated Ferroelectrics 2001 / 01 Vol. 33; Iss. 1-4

Retention behavior of ferroelectric memory devices depending on the capacitor processes

Kim, Jeong, Kim, Chang Jung, Chung, Ilsub
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Volume:
33
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584580108222295
Date:
January, 2001
File:
PDF, 385 KB
english, 2001
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