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Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications
Arita, K., Hayashi, S., Otsuki, T., Chen, Z., Lim, M., Bacon, J. W., Paz de Araujo, C. A.Volume:
22
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584589808208037
Date:
March, 1998
File:
PDF, 477 KB
english, 1998