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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 1.7kV high-power IGBT fabrication by bonded-wafer-concept
Matthias, Sven, Janisch, Wolfgang, Papadopoulos, Charalampos, Kopta, ArnostYear:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123476
File:
PDF, 367 KB
english, 2015