Scaling Theory of Electrically Doped 2D Transistors

IEEE Electron Device Letters 2015 / 7 Vol. 36; Iss. 7

Scaling Theory of Electrically Doped 2D Transistors

Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2436356
Date:
July, 2015
File:
PDF, 928 KB
english, 2015
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