Fermi-Level Unpinning Using a Ge-Passivated...

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IEEE Electron Device Letters 2015

Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High Electron Mobility Transistors

Yu, Hyun-Yong, Kim, Seung-Hwan, Kim, Gwang-Sik, Kim, Jeong-Kyu, Park, Jin-Hong, Shin, Changhwan, Choi, Changhwan
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Year:
2015
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2453479
File:
PDF, 507 KB
english, 2015
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