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TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations
Mukundan, S. K., Pagey, M. P., Cirba, C. R., Schrimpf, R. D., Galloway, K. F.Year:
1996
Language:
english
Journal:
Journal of Technology Computer Aided Design TCAD
DOI:
10.1109/TCAD.1996.6449178
File:
PDF, 673 KB
english, 1996