Low-Temperature Growth of Epitaxial Si Films by Atmospheric...

Japanese Journal of Applied Physics 2006 / 10 Vol. 45; Iss. 10B

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

Ohmi, Hiromasa, Kakiuchi, Hiroaki, Tawara, Naotaka, Wakamiya, Takuya, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.8424
Date:
October, 2006
File:
PDF, 283 KB
english, 2006
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