Study of the Nucleation of p-Doped SiC in Selective...

Materials Science Forum 2013 / 1 Vol. 740-742

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Carole, Davy, Vo Ha, Arthur, Thomas, Anthony, Lazar, Mihai, Thierry-Jebali, Nicolas, Tournier, Dominique, Cauwet, François, Soulière, Veronique, Brylinski, Christian, Brosselard, Pierre, Planson, D.,
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.177
Date:
January, 2013
File:
PDF, 3.77 MB
english, 2013
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