A Novel Truncated V-Groove 4H-SiC MOSFET with High...

Materials Science Forum 2014 / 2 Vol. 778-780

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Masuda, Takeyoshi, Wada, Keiji, Hiyoshi, Toru, Saitoh, Yu, Tamaso, Hideto, Sakai, Mitsuhiko, Hiratsuka, Kenji, Mikamura, Yasuki, Nishiguchi, Masanori, Hatayama, Tomoaki, Yano, Hiroshi
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.907
Date:
February, 2014
File:
PDF, 714 KB
english, 2014
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