Gate-all-around poly-Si nanowire junctionless thin-film...

Japanese Journal of Applied Physics 2015 / 06 Vol. 54; Iss. 6S1

Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels

Tso, Chia-Tsung, Liu, Tung-Yu, Sheu, Jeng-Tzong
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.06FG06
Date:
June, 2015
File:
PDF, 810 KB
english, 2015
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