The p -ZnO:N/ i...

Journal of Physics D Applied Physics 2015 / 08 Vol. 48; Iss. 32

The p -ZnO:N/ i -Al 2 O 3 / n -GaN heterostructure—electron beam induced profiling, electrical properties and UV detectivity

Przezdziecka, E, Chusnutdinow, S, Guziewicz, E, Snigurenko, D, Stachowicz, M, Kopalko, K, Reszka, A, Kozanecki, A
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
48
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/48/32/325105
Date:
August, 2015
File:
PDF, 913 KB
english, 2015
Conversion to is in progress
Conversion to is failed