Poly Gate Proximity Effect Modeling for 40nm CMOS

Applied Mechanics and Materials 2012 / 11 Vol. 236-237

Poly Gate Proximity Effect Modeling for 40nm CMOS

Li, Xi, Ren, Zheng, Wang, Ming Juan, Zhou, Hui, Sun, Li Jie, Hu, Shao Jian, Shi, Yan Ling
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Volume:
236-237
Language:
english
Journal:
Applied Mechanics and Materials
DOI:
10.4028/www.scientific.net/amm.236-237.134
Date:
November, 2012
File:
PDF, 2.81 MB
english, 2012
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