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[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al
Chang, Chia-Yuan, Chang, Edward Yi, Huang, Wei-Ching, Su, Yung-Hsuan, Trinh, Hai-Dang, Hsu, Heng-Tung, Miyamoto, YasuyukiYear:
2009
Language:
english
DOI:
10.1149/1.3206609
File:
PDF, 632 KB
english, 2009