![](/img/cover-not-exists.png)
Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process
Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, HajimeVolume:
8
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.8.065502
Date:
June, 2015
File:
PDF, 802 KB
english, 2015