TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Key Engineering Materials 2015 / 5 Vol. 645-646

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Zhong, Min, Zhao, Yu Hang, Chen, Shou Mian, Li, Ming, Zeng, Shao Hai, Zhang, Wei
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
645-646
Language:
english
Journal:
Key Engineering Materials
DOI:
10.4028/www.scientific.net/KEM.645-646.70
Date:
May, 2015
File:
PDF, 513 KB
english, 2015
Conversion to is in progress
Conversion to is failed