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TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS
Zhong, Min, Zhao, Yu Hang, Chen, Shou Mian, Li, Ming, Zeng, Shao Hai, Zhang, WeiVolume:
645-646
Language:
english
Journal:
Key Engineering Materials
DOI:
10.4028/www.scientific.net/KEM.645-646.70
Date:
May, 2015
File:
PDF, 513 KB
english, 2015