A New Two-Dimensional Analytical Model for Nanoscale...

Japanese Journal of Applied Physics 2009 / 10 Vol. 48; Iss. 10

A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors

Chen, Mei-Li, Lin, Wen-Kai, Chen, Shih-Fang
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.104503
Date:
October, 2009
File:
PDF, 343 KB
english, 2009
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