Origin of oxygen vacancies in resistive switching memory...

Journal of Physics Conference Series 2009 / 11 Vol. 190

Origin of oxygen vacancies in resistive switching memory devices

Andreasson, B P, Janousch, M, Staub, U, Meijer, G I, Ramar, A, Krbanjevic, J, Schaeublin, R
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Volume:
190
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/190/1/012074
Date:
November, 2009
File:
PDF, 562 KB
english, 2009
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