SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII - GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush, E. J., Kappers, M. J., Phillips, W. A., Lane, P., Wallis, D. J., Martin, T., Astles, M., Thomas, S., Pakes, A., Heuken,Volume:
7231
Year:
2009
Language:
english
DOI:
10.1117/12.814919
File:
PDF, 4.03 MB
english, 2009