Growth and characterization of InAsSb layers on GaSb...

Materials Science in Semiconductor Processing 2015 / 12 Vol. 40

Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

Bravo-García, Y.E., Rodríguez-Fragoso, P., Mendoza-Alvarez, J.G., Gonzalez de la Cruz, G.
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Volume:
40
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.06.062
Date:
December, 2015
File:
PDF, 695 KB
english, 2015
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