Reduction of 1/f carrier noise in InGaAsP/InP...

Semiconductor Science and Technology 1997 / 07 Vol. 12; Iss. 7

Reduction of 1/f carrier noise in InGaAsP/InP heterostructures by sulphur passivation of facets

Hakimi, R, Amann, M-C
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Volume:
12
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/12/7/004
Date:
July, 1997
File:
PDF, 179 KB
english, 1997
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