Statistical p–n Junction Leakage Model via Trap Level...

Japanese Journal of Applied Physics 2008 / 7 Vol. 47; Iss. 7

Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design

Kamohara, Shiro, Kubota, Katsuhiko, Moniwa, Masahiro, Okumura, Tsugunori
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.5304
Date:
July, 2008
File:
PDF, 205 KB
english, 2008
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