Data Retention Characteristics for Gate Oxide Schemes in...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology

Ryu, Seong-Wan, Yoo, Minsoo, Choi, Deuksung, Cha, Seonyong, Jeong, Jae-Goan
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DD01
Date:
April, 2011
File:
PDF, 991 KB
english, 2011
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