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Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations
Masui, Hisashi, Asamizu, Hirokuni, Melo, Thiago, Yamada, Hisashi, Iso, Kenji, Cruz, Samantha C, Nakamura, Shuji, DenBaars, Steven PVolume:
42
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/42/13/135106
Date:
July, 2009
File:
PDF, 778 KB
english, 2009