High Integrity SiO$_{2}$ Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, TadahiroVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.04DF03
Date:
April, 2012
File:
PDF, 877 KB
english, 2012