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High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 µm Gate Length
Umezawa, Hitoshi, Tsugawa, Kazuo, Yamanaka, Sadanori, Takeuchi, Daisuke, Okushi, Hideyo, Kawarada, HiroshiVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.L1222
Date:
November, 1999
File:
PDF, 1.28 MB
english, 1999